IXA37IF1200HJ copack nc i = a; v = v xpt igbt symbol definition r a t i n g s features / advantages: typ. max. i c25 a t a rbsoa 105 v 2.1 v c (2) e(3) (g) 1 min. 140 applications: v ces v 1200 58 t = 25c c t = 90c c a 37 package: part number t = 125c vj v = v; ge r = g 27 v ge(th) 6.5 v 2.1 v 5.4 i v c25 = = 58 1200 15 IXA37IF1200HJ a v collector emitter voltage collector current reverse bias safe operation area gate emitter threshold voltage conditions unit t = 25c vj p tot w 195 t = 25c vj s 10 v = v cek 1200 v = v; v = 15 v ce 900 total power dissipation = 1.8 v housing: isoplus247 easy paralleling due to the positive temperature coefficient of the on-state voltage rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic thin wafer technology combined with the xpt design results in a competitive low vce(sat) sonic? diode - fast and soft reverse recovery - low operating forward voltage ac motor drives solar inverter medical equipment uninterruptible power supply air-conditioning systems welding equipment switched-mode and resonant-mode power supplies inductive heating, cookers v ges v 20 maximum dc gate voltage t = 25c vj i sc ; non-repetitive short circuit current i ces ma v = v ; v = 0 v 0.1 collector emitter leakage current ce t = 25c vj ma 0.1 i ges na 500 gate emitter leakage current r thjc 0.64 thermal resistance juntion to case t d(on) ns 70 turn-on delay time 40 ns t = c 125 turn-on energy per pulse ns 250 100 ns 3.8 4.1 106 mj mj inductive load vj ce(sat) collector emitter saturation voltage sc short circuit duration ces v ce(sat)typ i c90 r = g scsoa short circuit safe operation area ge i = ma; v = v c ge t = 25c vj t = c vj 125 1.8 c ge ce ces ge 6 t = c vj 125 v = 0 v; v = 20 v ce ge v = v; i = a ce c current rise time turn-off delay time current fall time turn-off energy per pulse t r t d(off) t f e on e off v = 15 v; r = ge g q gon total gate charge k/w v = v; v = v; i = a ce ge c 27 35 15 1.5 600 35 27 600 15 35 a t = 125c vj igbt v = 0 v ge ixys reserves the right to change limits, conditions and dimensions. 20100623c data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
IXA37IF1200HJ t = c i f25 a 42 t = 25c c forward current reverse recovery time v = v q t = 25c reverse recovery charge v 1.95 c i = a vj r vj symbol definition ratings typ. max. min. conditions uni t f rr 3.5 350 n s t rr maximum reverse recovery current 30 a 0.9 r thjc thermal resistance juntion to case 1.2 k/w di /dt = - a/s; f 600 igbt 1.1 v v 0 diode 1.25 v i f t = c c a 25 v f forward voltage t = c 125 vj v 1.95 i rm e rec(off) reverse recovery losses at turn-off i = a f symbol definition ratings typ. max. min. uni t i v 0 r 0 r 0 v 0 r 0 39 28.3 diode equivalent circuits for simulation r1 r2 r3 r4 c1 c2 c3 c4 0.152 r 1 0.3078 diode igbt r 2 r 3 r 4 0.0724 0.1078 0.3413 0.3475 0.2171 0.2941 0.0025 1 0.03 2 3 4 0.03 0.08 0.0025 0.03 0.03 0.08 t = c vj 150 t = c vj 150 30 30 90 90 mj ixys reserves the right to change limits, conditions and dimensions. 20100623c data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
IXA37IF1200HJ ratings ordering delivering mode base qty code key standard part name ixa 37 if 1200 hj 507993 tube 30 product m arkin g date code part no. logo ul listed ixys abcd order code i x a 37 if 1200 hj part number igbt xpt igbt gen 1 / std copack isoplus247 (3) = = = marking on product IXA37IF1200HJ current rating [a] reverse voltage [v] = = = = package isoplus247 r thch k/w 0.25 t stg c 150 storage temperature -55 weight g 6 symbol definition typ. max. min. conditions thermal resistance case to heatsink unit f c n 120 mounting force with clip 20 v isol v 3600 t = 1 second v 3000 t = 1 minute isolation voltage d s mm mm creapage distance on surface d a striking distance through air t vj c 150 virtual junction temperature -55 ixys reserves the right to change limits, conditions and dimensions. 20100623c data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
IXA37IF1200HJ die konvexe form des subs trates ist typ. < 0.04 mm ber der kunststoff- f- oberfl?che der bauteilunterseite the convex bow of substrat e is typ. < 0.04 mm over plastic surface level of device bottom side die geh?useabmessungen entsprechen dem typ to-247 ad gem?? jedec au?er schraubloch und l max . this drawing will meet all dimensions requiarement of jedec outlineto-247 ad except screw hole and except l max . ixys reserves the right to change limits, conditions and dimensions. 20100623c data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
IXA37IF1200HJ 0123 0 10 20 30 40 50 60 70 0 20406080 0 2 4 6 8 10 012345 0 10 20 30 40 50 60 70 v ce [v] i c [a] q g [nc] v ge [v] 9v 11 v 5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 0 20406080100120140 0 5 10 15 20 13 v 20 40 60 80 3 4 5 6 e [mj] e on fig. 1 typ. output characteristics v ce [v] i c [a] v ge =15v 17 v 19 v fig. 2 typ. output characteristics i c [a] fig. 3 typ. tranfer characteristics v ge [v] fig. 4 typ. turn-on gate charge fig. 5 typ. switching energy vs. collector current e off fig. 6 typ. switching energy vs. gate resistance r g [ ] e [mj] i c [a] e on e off t vj =125c t vj = 25c v ge =15v t vj =125c t vj = 125c t vj =25c i c =35a v ce =600v r g =27 v ce = 600 v v ge =15v t vj =125c i c = 35 a v ce = 600 v v ge =15v t vj =125c ixys reserves the right to change limits, conditions and dimensions. 20100623c data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
IXA37IF1200HJ 300 400 500 600 700 800 900 1000 1100 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 q rr [c] i f [a] v f [v] di f /dt [a/s] t vj = 125c t vj = 25c t vj =125c v r =600 v 15 a 30 a 60 a fig. 7 typ. forward current versus v f fig. 8 typ. reverse recov.charge q rr vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 i rr [a] di f /dt [a/s] t vj = 125c v r = 600 v 15 a 30 a 60 a fig. 9 typ. peak reverse current i rm vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 t rr [ns] di f /dt [a/s] 15 a 30 a 60 a t vj = 125c v r =600 v fig. 10 typ. recovery time t rr versus di/dt fig. 5 typ. recovery energy e rec versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 0.8 1.2 1.6 2.0 e rec [mj] di f /dt [a/s] t vj =125c v r = 600 v 15 a 30 a 60 a 0.001 0.01 0.1 1 10 0.01 0.1 1 10 t p [s] z thjc [k/w] fig. 12 typ. transient thermal impedance diode igbt ixys reserves the right to change limits, conditions and dimensions. 20100623c data according to iec 60747and per diode unless otherwise specified ? 2010 ixys all rights reserved
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